A numerical approach to quasi-ballistic transport and plasma oscillations in junctionless nanowire transistors
نویسندگان
چکیده
منابع مشابه
Metal-Gated Junctionless Nanowire Transistors
Junctionless Nanowire Field-Effect Transistors (JNFETs), where the channel region is uniformly doped without the need for source-channel and drain-channel junctions or lateral doping abruptness, are considered an attractive alternative to conventional CMOS FETs. Previous theoretical and experimental works [1][2] on JNFETs have considered polysilicon gates and silicon-dioxide dielectric. However...
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ژورنال
عنوان ژورنال: Journal of Computational Electronics
سال: 2020
ISSN: 1569-8025,1572-8137
DOI: 10.1007/s10825-020-01488-4